LB122T discrete semiconductors r dc components co., ltd. technical specifications of npn triple diffused planar transistor pinning 1 = emitter 2 = collector 3 = base description designed for use in medium power switching applications. characteristic symbol rating unit collector-base voltage vcbo 600 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 6 v collector current (dc) ic 800 ma collector current (pulse) ic 1600 ma base current (dc) ib 100 ma base current (pulse) ib 200 ma t otal power dissipation(tc=25oc) pd 2 0 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown voltage bvcbo 600 - - v ic=100ma collector-emitter breakdown voltage bvceo 400 - - v ic=10ma emitter-base breakdown voltage bvebo 6 - - v ie=10ma collector cutoff current icbo - - 10 ma vcb=600v iceo - - 10 ma vce=400v emitter cutoff current iebo - - 10 ma veb=6v collector-emitter saturation voltage (1) vce(sat)1 - - 0.4 v ic=100ma, ib=20ma vce(sat)2 - - 0.8 v ic=300ma, ib=60ma base-emitter saturation voltage (1) vbe(sat) - - 1 v ic=100ma, ib=20ma dc current gain(1) hfe1 10 - 40 - ic=0.1a, vce=10v hfe2 10 - - - ic=0.5a, vce=10v turn-off time t off - - 0.6 ms ic=0.3a, vcc =100v, ib1=-ib2=0.06a electrical characteristics (ratings at 25oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank b1 b2 b3 b4 b5 b6 range 10~17 13~22 18~27 23~32 28~37 33~40 classification of hfe1 to-126 dimensions in inches and (millimeters) .055(1.39) .045(1.14) .032(0.81) .028(0.71) .052(1.32) .048(1.22) .620(15.75) .600(15.25) .279(7.09) .275(6.99) .041(1.05) .037(0.95) .022 (0.55) .154(3.91) .150(3.81) typ 3o typ 3o typ .105(2.66) .095(2.41) .189(4.80) .171(4.34) .304(7.72) .285(7.52) 3o typ 3o typ .152(3.86) .138(3.50) 1 2 3
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